Photo-electro-chemical Deep Trench Etching in Gallium Nitride
SCIOCS Co Ltd and Hosei University, both of Japan, have reported progress in using photo-electro-chemical (PEC) etching for deep high-aspect-ratio trenches in gallium nitride (GaN) [Fumimasa Horikiri et al, Appl. Phys. Express, vol11, [more...]